BSS138NL6327 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSS138NL6327 Datasheet PDF : 9 Pages
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SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
BSS138N
60 V
3.5 Ω
0.23 A
PG-SOT-23
Type
BSS138N
BSS138N
Package Tape and Reel
PG-SOT-23 L6327: 3000
PG-SOT-23 L6433: 10000
Marking
SKs
SKs
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Reverse diode dv /dt
dv /dt
I D=0.23 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
ESD sensitivity
MIL-STD 883 (HBM)
ESD sensitivity
JESD22-A114 (HBM)
Power dissipation
Operating and storage temperature
P tot
T A=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
0.23
A
0.18
0.92
6
kV/µs
±20
V
Class 1 (<1999V)
Class 0 (<250V)
0.36
W
-55 ... 150
°C
55/150/56
Rev. 2.82
page 1
2009-02-11
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