POWEREX
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
VO
Output voltage
Collector current
(Current per 1 cir- Duty Cycle ≤ 10%
IC
cuit when 8 circuits
are coming on si- Duty Cycle ≤ 50%
multaneously)
Ic ≤ 400mA
VIH
“H” input voltage
Ic ≤ 200mA
VIL
“L” input voltage
Limits
Unit
min
typ
max
0
—
50
V
0
—
200
0
—
mA
70
3.85
—
3.4
—
0
—
30
V
30
V
0.6
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Test conditions
Limits
min
typ+
Unit
max
V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA
50
—
—
V
VCE(sat)
VI = 3.85V, IC = 400mA
Collector-emitter saturation voltage VI = 3.4V, IC = 200mA
—
1.3
2.4
V
—
1.0
1.6
II
Input current
II = 3.85V
VI = 25V
VF
Clamping diode forward voltage IF = 400mA
IR
Clamping diode reverse current VR = 50V
hFE
DC amplification factor
VCE = 4V, IC = 350mA, Ta = 25°C
—
0.95
1.8
—
8.7
18
mA
—
1.5
2.4
V
—
—
100
µA
1000 2500
—
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
12
—
ns
—
240
—
ns
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
Vo
PG
50Ω
Measured device
RL
OPEN
OUTPUT
CL
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω,
VI = 3.85V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
50%
INPUT
OUTPUT
50%
ton
50%
50%
toff
Jan. 2000