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Part Name
Description
BSS205NL6327 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BSS205NL6327
OptiMOS™2 Small-Signal-Transistor
Infineon Technologies
BSS205NL6327 Datasheet PDF : 9 Pages
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8
9
13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter:
T
j(start)
10
1
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=2.5 A pulsed
parameter:
V
DD
8
BSS205N
7
6
25 °C
5
10 V
100 °C
10
0
4
4V
125 °C
3
16 V
2
10
-1
10
0
10
1
10
2
t
AV
[µs]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=250 µA
1
0
10
3
0
1
2
3
4
Q
gate
[nC]
16 Gate charge waveforms
Rev 2.3
25
V
GS
24
23
22
21
20
V
g s(th)
19
18
17
16
-60
-20
20
60
100
140
T
j
[°C]
Q
g(th)
Q
gs
page 7
Q
g
Q
sw
Q
gd
Q
gate
2010-03-25
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