DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BSS205NL6327 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BSS205NL6327
Infineon
Infineon Technologies 
BSS205NL6327 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
13 Avalanche characteristics
I AS=f(t AV); R GS=25
parameter: T j(start)
101
14 Typ. gate charge
V GS=f(Q gate); I D=2.5 A pulsed
parameter: V DD
8
BSS205N
7
6
25 °C
5
10 V
100 °C
100
4
4V
125 °C
3
16 V
2
10-1
100
101
102
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
1
0
103
0
1
2
3
4
Q gate [nC]
16 Gate charge waveforms
Rev 2.3
25
V GS
24
23
22
21
20
V g s(th)
19
18
17
16
-60
-20
20
60
100
140
T j [°C]
Q g(th)
Q gs
page 7
Qg
Q sw
Q gd
Q gate
2010-03-25

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]