SPA03N60C3 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
SPA03N60C3 Datasheet PDF : 2 Pages
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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SPA03N60C3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=135uA
600
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=0.25mA
2.1
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2A;Tj=25℃
VGS= 10V; ID=2A; Tj=150℃
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0V;Tj=25℃
VDS= 600V; VGS= 0V; Tj=150℃
VSDF
Diode forward voltage
ISD=3.2A, VGS = 0 V
3
3.9
V
0.26
1.4
3.8
Ω
±100 nA
0.5
1
70
μA
1
1.2
V
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
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incidental damages.
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