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P2N2222A(2007) View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
P2N2222A
(Rev.:2007)
ON-Semiconductor
ON Semiconductor 
P2N2222A Datasheet PDF : 6 Pages
1 2 3 4 5 6
P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = --2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
td
--
10
ns
tr
--
25
ns
ts
--
225
ns
tf
--
60
ns
+16 V
0
--2 V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 kΩ
< 2 ns
Figure 1. Turn--On Time
+30 V
200
+16 V
1.0 to 100 ms,
DUTY CYCLE 2.0%
CS* < 10 pF
0
--14 V
< 20 ns
1k
1N914
Scope rise time < 4 ns
--4 V
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 2. Turn--Off Time
+30 V
200
CS* < 10 pF
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
TJ = 125°C
25°C
--55°C
VCE = 1.0 V
VCE = 10 V
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
http://onsemi.com
3

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