B1344 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

B1344

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

Silicon PNP Darlington Power Transistor

2SB1344

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified

SYMBOL /

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

ViBRiCEO Collector-Emitter Breakdown Voltage lc=-10mA; IB= 0

-100

V

ViBS,CBO Collector-Base Breakdown Voltage

lc= -50u A; lt= 0

-100

V

VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; !B= -6mA

ICBO

Collector Cutoff Current

VCB=-100V: IE=0

-1.5

V

-10

MA

It BO

Emitter Cutoff Current

VEB= -5V; lc= 0

-3

mA

hf-b

DC Current Gain

lc= -2A; VCF= -3V '

1000

20000

COB

Output Capacitance

lE=0;VcB=-10V;fiest= 1MHz

90

PF

fi

Current-Gain—Bandwidth Product

!E= 0.5A; VCE= -5V; ftest= 10MHz

12

MHz

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