2SA1116 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SA1116 Datasheet PDF : 2 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973)376-8960
2SA1116
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min.)
• High Power Dissipation
• Complement to Type 2SC2607
APPLICATIONS
• Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25-C
T
Junction Temperature
Tstg
Storage Temperature
-5
A
150
W
150
-c
-65-150
•c
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
•A
f
-JU-D
L
V-
ii
DIM
A
B
C
0
E
_a_
H
K
L
H
Q
U
V
nun
MIH MAX
3900
25.30 26,6?
7.80 8.50
0.90 1 10
».4Q 1.60
1092
546
11.J3
1675
1940
4,00
30.00
430
1350
1705
19.62
420
3d 20
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility foranv errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
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