2SD799 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2SD799 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
2SD799
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
2.5
V
VECF
C-E Diode Forward Voltage
IF= 4A
3.0
V
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE-1
DC Current Gain
IC= 2A ; VCE= 2V
600
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
100
COB
Output Capacitance
IE= 0 ; VCB= 50V;f= 1.0MHz
35
pF
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
1
μs
IB1= IB2= 40mA; RL= 25Ω;
VCC= 100V;
8
μs
PW= 20μs, Duty Cycle≤1%
5
μs
SPTECH website：www.superic-tech.com
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