2N5868 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N5868 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Vceo(sus) Collector-Emitter Sustaining Voltage lc= -100mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -1A
VBE(sat) Base-Emitter Saturation Voltage
lc= -5A; IB= -1A
ICEO
Collector Cutoff Current
VCE= -40V; IB= 0
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc=-1.5A;VCE=-4V
hFE-2
DC Current Gain
lc= -5A; VCE= -4V
fr
Current-Gain—Bandwidth Product lc= -0.5A; VCE= -10V; ftes,= 1.0MHz
2N5868
MIN MAX UNIT
-80
V
-1.0
V
-1.5
V
-2.0
mA
-1.0
mA
-1.0
mA
20
100
4
4
MHz
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