CY20AAJ-8H-T13 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

CY20AAJ-8H-T13

Nch IGBT for Strobe Flasher

Renesas Electronics 

CY20AAJ-8H

Electrical Characteristics

Parameter

Collector-emitter breakdown voltage

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Fall time

Symbol

V(BR)CES

ICES

IGES

VGE(th)

VCE(sat)

tf

Min.

450

—

—

0.5

—

—

Typ.

—

—

—

0.8

4

0.5

Max.

—

10

±10

1.5

8

—

Unit

V

µA

µA

V

V

µs

(Tch = 25°C)

Test conditions

IC = 1 mA, VGE = 0 V

VCE = 400 V, VGE = 0 V

VGE = ±6 V, VCE = 0 V

VCE = 10 V, IC = 1 mA

VCE = 4 V, IC = 130 A

IC = 20 A, VCC = 300 V,

Resistive loads

VGE = 5 V, RG = 30 Ω

Performance Curves

Maximum Pulse Collector Current

(Conductive Capability in Strobe Flasher Applications)

160

Tc = 70°C

CM = 400µF

RG = 30Ω

120 Single pulse

80

40

0

0

2

4

6

8

Gate-Emitter Voltage VGE (V)

Rev.2.00, Nov 29, 2005, page 2 of 4

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