2SD1684 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1684 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SD1684
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10uA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
COB
Output Capacitance
IE=0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
100
V
120
V
6
V
0.5
V
1.2
V
0.1 μA
0.1 μA
100
400
30
100
MHz
18
pF
hFE -1Classifications
Q
S
T
100-200 140-280 200-400
isc website：www.iscsemi.com
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