BUX41N View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
BUX41N Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=8A; IB=0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=12A; IB=1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC=12A; IB=1.5A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE=130V; IB= 0
VCB= 220V; IE= 0
VCB= 220V; IE= 0; TC= 125℃
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 8A ; VCE= 4V
hFE-2
DC Current Gain
IC= 12A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V; f=10MHz
Switching Times; Resistive Laod
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 12A ;IB1= -IB2= 1.5A;
VCC= 30V;
RB= 3.9Ω; RC= 2.5Ω
BUX41N
MIN TYP. MAX UNIT
160
V
7
V
1.2
V
1.6
V
2.0
V
1.0 mA
1.0
5.0
mA
1.0 mA
15
45
8
8
MHz
1.3 μs
1.5 μs
0.8 μs
SPTECH website：www.superic-tech.com
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