2SD1497 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2SD1497

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·High Breakdown Voltage-

: VCBO= 1500V (Min)

·High Switching Speed

APPLICATIONS

·Designed for TV horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

600

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

6

A

IC(surge) Collector Current-Surge

PC

Collector Power Dissipation

@ TC= 25℃

TJ

Junction Temperature

16

A

50

W

150

℃

Tstg

Storage Temperature Range

-45~150

℃

SPTECH website：www.superic-tech.com

2SD1497

1

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