2SA968 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2SA968

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SA968

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -10mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

!E=-1mA; lc=0

VcE(sat) Collector-Emitter Saturation Voltage lc= -0.5A; IB= -50mA

VBE(OH) Base-Emitter On Voltage

lc= -0.5A ; VCE= -5V

ICBO

Collector Cutoff Current

VCB=-160V; IE=0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

rips

DC Current Gain

lc=-0.1A; VCE=-5V

COB

Output Capacitance

lE=0;VcB=-10V;ftest=1MHz

fr

Current-Gain—Bandwidth Product

lc=-0.1A;VCE=-10V

MIN TYP. MAX UNIT

-160

V

-5

V

-1.5

V

-1.0

V

-1.0 U A

-1.0 U A

70

240

30

PF

100

MHz

• hFE Classifications

o

Y

70-140 120-240

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