2SD1395 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1395 Datasheet PDF : 2 Pages
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1395
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= 2.5A, IB= 5mA
MIN TYP. MAX UNIT
50
V
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A, IB= 5mA
2.0
V
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= 50V, IE= 0
VCE= 50V, IB= 0
0.1
mA
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE
DC Current Gain
IC= 2.5A; VCE= 3V
fT
Current-Gain—Bandwidth Product IC= 2.5A ; VCE= 5V
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 3.0A; IB1= IB2= 6mA
1000
15000
20
MHz
0.6
μs
4.0
μs
1.5
μs
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