2SD743 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2SD743

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·DC Current Gain-

: hFE= 40~200 @IC= 0.5A

·Complement to Type 2SB703

APPLICATIONS

·Designed for use in audio frequency power amplifier, low

speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

6

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

1

A

40

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

3.125 ℃/W

SPTECH website：www.superic-tech.com

2SD743

1

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