2N7002KA View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
2N7002KA Datasheet PDF : 11 Pages
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NXP Semiconductors
2N7002KA
N-channel TrenchMOS FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown
voltage
V(BR)GSS gate-source breakdown
voltage
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
IG = ±1 mA; VDS = 0 V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
IDSS
drain leakage current
VDS = 48 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
IGSS
gate leakage current
VGS = ±10 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 500 mA; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
ton
turn-on time
toff
turn-off time
Source-drain diode
VGS = 0 V; VDS = 10 V; f = 1 MHz;
see Figure 12
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG = 50 Ω; RGS = 50 Ω
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
IS = 300 mA; VGS = 0 V; see Figure 11
IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V;
VDS = 25 V
Min Typ Max Unit
60 75 -
V
55 -
-
V
16 22 -
V
1
2
0.6 -
-
-
-
V
-
V
3.5 V
-
0.01 1
µA
-
-
10 µA
-
50 500 nA
-
2.8 4.4 Ω
-
-
8.14 Ω
-
3.8 5.3 Ω
-
13 40 pF
-
8
30 pF
-
4
10 pF
-
3
10 ns
-
9
15 ns
-
0.85 1.5 V
-
30 -
ns
-
30 -
nC
2N7002KA_3
Product data sheet
Rev. 03 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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