2N7002KA View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
2N7002KA Datasheet PDF : 11 Pages
| |||
NXP Semiconductors
2N7002KA
N-channel TrenchMOS FET
1
ID
(A)
0.8
0.6
0.4
0.2
003aab352
10
5
4.5
4
VGS (V) = 3.5
10000
RDSon
(mΩ)
8000
6000
4000
2000
VGS (V) = 4
003aab353
4.5
5
10
0
0
1
2
3
4
VDS (V)
0
0
0.2
0.4
0.6
0.8
1
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
1
ID
(A)
0.8
003aab354
2.4
a
1.8
003aac034
0.6
1.2
0.4
Tj = 150 °C 25 °C
0.6
0.2
0
0
2
4
6
VGS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
−60
0
60
120
180
Tj (°C)
a = -R---D----RS---o-D--n--S(--2o--5-n--°--C----)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
2N7002KA_3
Product data sheet
Rev. 03 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
6 of 11
Share Link: 