2N7002KE View Datasheet(PDF) - KEC

Part Name

Description

Manufacturer

2N7002KE

N Channel MOSFET

KEC 

2N7002KE

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

Static

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BVDSS

IDSS

VGS=0V, ID=10μA

VDS=60V, VGS=0V

Gate-Body Leakage, Forward

IGSSF

VGS=20V, VDS=0V

Gate-Body Leakage, Reverse

Gate Threshold Voltage

Drain-Source ON Resistance

IGSSR

Vth

RDS(ON)

VGS=-20V, VDS=0V

VDS=VGS, ID=250μA

VGS=10V, ID=300mA

VGS=4.5V, ID=250mA

(Note 3)

(Note 3)

Forward Transconductance

gFS

VDS=10V, ID=300mA

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=300mA

Dynamic Note 3)

Input Capacitance

Ciss

Reverse Transfer Capacitance

Crss

VDS=25V, VGS=0V, f=1MHz

Output Capacitance

Coss

Switching Time

Turn-On Time

Turn-Off Time

ton

VDD=30V, ID=300mA, VGS=10V(Note 3)

toff

Note 3) Pulse Test : Pulse Width≦80㎲, Duty Cycle≦1%

MIN.

60

-

-

-

1.0

-

-

250

-

-

-

-

-

-

TYP. MAX. UNIT.

-

-

V

-

1

μA

-

10

μA

-

-10

μA

-

2.0

V

1.2

1.5

Ω

1.45 1.9

-

-

mS

1.0

1.2

V

20

-

4

-

pF

8

-

9

-

ns

43

-

SWITCHING TIME TEST CIRCUIT

VGS

VDD

RL

VIN

D

VOUT

G

S

td(on)

ton

tr

90%

td(off)

toff

tf

90%

OUTPUT VOUT 10%

INVERTED

90%

50%

50%

INPUT VIN 10%

PULSE WIDTH

2013. 7. 19

Revision No : 1

2/4

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