Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
2N7002KDW-AU View Datasheet(PDF) - PANJIT INTERNATIONAL
Part Name
Description
Manufacturer
2N7002KDW-AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
2N7002KDW-AU Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
2N7002KDW-AU
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source B reakdown
Voltage
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage D rain
C urrent
Gate Body Leakage
Forward Transconductance
Dynamic
To ta l G a te C ha r g e
Tur n- On D e la y Ti me
Turn-Off D e la y Ti me
Input C apaci tance
Output C apacitance
Reverse Transfer
C a p a c i ta nce
Source-Drain D iode
S ymbol
Te s t C o nd i ti o n
B V
DSS
V
GS(th)
R
D S (o n)
R
D S (o n)
I
D S S
I
GSS
g
fS
V
GS
=0V, I
D
=10uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
DS
=60V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
DS
=15V, I
D
=250mA
Q
g
t
on
t
off
C
iss
C
oss
C
rss
V
DS
=15V, I
D
=200mA
V
GS
=4.5V
V
DD
=30V , R
L
=150
Ω
I
D
=200mA , V
GEN
=10V
R
G
=10
Ω
V
DS
=25V, V
GS
=0V
f=1.0MH
Z
Diode Forward Voltage
C ontinuous D iode Forward
C urrent
Pulsed Diode Forward
C urrent
V
SD
I
S
=2 0 0 mA , V
GS
=0 V
I
s
-
I
sM
-
Min.
60
1
-
-
-
-
100
-
-
-
-
-
-
-
-
-
Typ .
-
-
-
-
-
-
-
-
-
-
-
-
-
0.82
-
-
Max. Uni ts
-
V
2.5
V
4.0
Ω
3.0
1
uA
+10
uA
-
mS
0.8
nC
20
ns
40
35
10
pF
5
1.3
V
115
mA
800
mA
Switching
V
DD
Test Circuit
V
IN
R
L
Gate Charge
V
DD
Test Circuit
V
GS
R
L
V
OUT
R
G
1mA
R
G
May 13,2015-REV.03
PAGE . 2
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]