2SB1186F View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2SB1186F

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min.)

·Good Linearity of hFE

·Complement to Type 2SD1763

APPLICATIONS

·Power amplifier applications.

·Driver stage amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.5

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-3

A

2

W

20

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SB1186

SPTECH website：www.superic-tech.com

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