2SB1186AD View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

2SB1186AD

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

2SB1186A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0

-160

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= -50μA; IE= 0

-160

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -50μA; IC= 0

-5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A

-2.0 V

VBE(sat) Base-Emitter Saturation Voltage

IC= -1A; IB= -0.1A

-1.5 V

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

-1 μA

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-1 μA

hFE

DC Current Gain

IC= -0.1A; VCE= -5V

60

200

COB

Output Capacitance

IE= 0; VCB= -10V; ftest=1MHz

30

pF

fT

Current-Gain—Bandwidth Product

IE= 0.1A; VCE= -5V; ftest= 30MHz

50

MHz

 hFE Classifications

D

E

60-120 100-200

SPTECH website：www.superic-tech.com

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