TIP2955 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

TIP2955

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-

: hFE=20-70@IC = -4A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= -1.1 V(Max)@ IC = -4A

·Complement to Type TIP3055

APPLICATIONS

·Designed for general-purpose switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-15

A

IB

Base Current

-7

A

PC

Collector Power Dissipation TC=25℃

90

W

Tj

Junction Tmperature

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE UNIT

Rth j-c Thermal Resistance,Junction to Case

1.39 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W

SPTECH website：www.superic-tech.com

TIP2955

1

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