B1017 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

B1017

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= -1.7V(Max)@IC= -3A

·Good Linearity of hFE

·Complement to Type 2SD1408

APPLICATIONS

·Designed for power amplifier applications.

·Recommended for 20~25W high-fidelity audio frequency

amplifier output stage.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

IB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-0.4

A

2

W

25

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SB1017

SPTECH website：www.superic-tech.com

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