B1017 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

B1017

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A

VBE(on) Base-Emitter On Voltage

IC= -3A; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -0.5A; VCE= -5V

hFE-2

DC Current Gain

IC= -3A; VCE= -5V

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -5V

 hFE-1 Classifications

R

O

Y

40-80 70-140 120-240

2SB1017

MIN TYP. MAX UNIT

-80

V

-1.7 V

-1.5 V

-30 μA

-0.1 mA

40

240

15

130

pF

9

MHz

SPTECH website：www.superic-tech.com

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