2SK3018W View Datasheet(PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Part Name

Description

Manufacturer

2SK3018W

N-Channel MOSFET in a SOT-323 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SK3018W

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

符号

Symbol

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

Drain Current – Continuous

ID

Drain Current– Pulsed

IDP*1

Reverse drain current–Continuous

Reverse drain current– Pulsed

Total power dissipation (Tc=25℃)

IDR

IDRP*1

PD*2

Channel Temperature

Tch

Storage Temperature Range

Tstg

*1:Pw≤10μs, Duty cycle≤50%

*2:With each pin mounted on the recommended lands

数值

Rating

30

±20

100

200

100

200

200

150

-55～150

单位

Unit

V

V

mA

mA

mA

mA

mW

V

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

符号

Symbol

Drain–Source Breakdown Voltage V(BR)DSS

Gate threshold voltage

VGS(th)

RDS(on)1

Static Drain–Source On–Resistance

RDS(on)2

Zero Gate Voltage Drain Current

IDSS

Gate–Body Leakage.

IGSS

Forward Transconductance

gFS

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn–On Delay Time

td(on)

Turn–On Rise Time

tr

Turn–Off Delay Time

td(off)

Turn–Off Fall Time

tr

测试条件

Test Conditions

最小值 典型值 最大值 单位

Min Typ Max Unit

VGS=0V

ID=10μA 30

V

VDS=3.0V ID=100μA 0.8

1.5 V

VGS=4.0V ID=10mA

5.0 8.0 Ω

VGS=2.5V ID=1.0mA

7.0 13 Ω

VDS=30V VGS=0V

1.0 μA

VGS=±20V VDS=0V

±1 μA

VDS=3V

ID=10mA 20

mS

VDS=5.0V VGS=0V

f=1.0MHz

13

pF

9.0

pF

4.0

pF

15

ns

ID=10mA VDD≈5.0V

35

ns

VGS=5.0V RL=500Ω

RGS=10Ω

80

ns

80

ns

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