MJD117 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

MJD117

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

MJD117

DESCRIPTION

·High DC current gain

·Built-in a damper diode at E-C

·Lead formed for surface mount applications(NO suffix)

·Straight lead(IPAK,“－I”suffix)

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-2

A

ICP

Collector Current-Pulse

PC

Collector Power Dissipation

Ta=25℃

PC

Collector Power Dissipation

TC=25℃

TJ

Junction Temperature

-4

A

1.75

W

20

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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