MJD117 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

MJD117

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor

MJD117

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA

VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA

VBE(sat)* Base-Emitter Saturation Voltage

IC=- 4A; IB=- 40mA

VBE(on)* Base-Emitter On Voltage

IC=-2A; VCE=-3V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

ICBO

Collector Cutoff Current

VCB=- 50V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1*

DC Current Gain

IC=-0.5A; VCE= -3V

hFE-2*

DC Current Gain

IC= -2A; VCE=-3V

hFE-3*

DC Current Gain

IC=- 4A; VCE=-3V

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product

*:Pulse test PW≤300us,duty cycle≤2%

IC= -0.75A; VCE= -10V

MIN TYP. MAX UNIT

-2.0 V

-3.0 V

-4.0 V

-2.8 V

-100

V

-20 uA

-2 mA

500

1K

12K

200

200

pF

25

MHz

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