BDW52 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BDW52 Datasheet PDF : 2 Pages
| |||
J.
C/
LJ
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,U na.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDW52/A/B/C
DESCRIPTION
• Collector Current -lc= -15A
• Collector-Emitter Sustaining Voltage-
: VCEO(sus) = -45V(Min)- BDW52; -60V(Min)- BDW52A
-SOV(Min)- BDW52B;.-100V(Min)- BDW52C
• Complement to Type BDW51/A/B/C
APPLICATIONS
• Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BDW52
-45
VCBO
Collector-Base
Voltage
BDW52A
-60
V
BDW52B
-80
BDW52C
-100
BDW52
-45
VCEO
Collector-Emitter
Voltage
BDW52A
-60
V
BDW52B
-80
BDW52C
-100
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
-15
A
-20
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
-7
A
125
W
200
°C
Tstg
Storage Temperature Range
-65-200 "C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.4
UNIT
'CM/
Quality Semi-Conductors
PIN t.BASE
2.ayllTTER
3. COLLECT OR (CASE)
TO-3 package
mil
out MM WAX
A
3900
B 25.30 36,67
c
780 8.30
D
0.90
1.10
E
140 160
G
tO.92
K
5.4S
K 11.40 13.50
L 16.75 1705
N 19.40 1962
g
4.00 4.20
u
v
30.00 30.20
4 JO 4.50
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