MRFG35010NT1 View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
Manufacturer
MRFG35010NT1 Datasheet PDF : 12 Pages
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TYPICAL CHARACTERISTICS
0
0
IRL
−10
−10
−20
VDS = 12 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA
−20
ΓS = 0.898é−134.03_, ΓL = 0.828é−140.67_
−30
−30
−40
−40
ACPR
−50
−50
−60
0.1
1
Pout, OUTPUT POWER (WATTS)
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
−60
10
12.5
60
VDS = 12 Vdc, IDQ = 180 mA
12
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
50
ΓS = 0.898é−134.03_, ΓL = 0.828é−140.67_
11.5
40
PAE
11
30
GT
10.5
20
10
10
9.5
0
0.1
1
10
Pout, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
RF Device Data
Freescale Semiconductor
MRFG35010NT1
5
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