Hi-Reliability GaAIAs Infrared
Emitting Diode
OP223, OP224 (TX, TXV), OP224 (S)
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron](1)
Reverse Voltage
Continuous Forward Current
Power Dissipation(2)
Notes:
1. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
2. Derate linearly 1.00 mW/° C above 25° C.
-65o C to +150o C
-55o C to +125o C
260° C
2.0 V
100 mA
100 mW
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP
Input Diode
EE (APT)
Radiant Power Output
OP223 (TX)
OP224 (S, TX, TXV)
1.00 -
1.50 -
VF
Forward Voltage
IR
Reverse Current
λP
Wavelength at Peak Emission
B
Spectral Bandwidth between Half Power
Points
0.80 -
-
-
- 890
-
80
∆λP /∆T Spectral Shift with Temperature
θHP Emission Angle at Half Power Points
- 0.18
-
18
MAX UNITS
TEST CONDITIONS
-
mW IF = 50 mA
-
IF = 50 mA
1.80
V IF = 50 mA
100
µA VR= 2.0 V
-
nm IF = 50 mA
-
nm IF = 50 mA
- nm/°C IF = Constant
- Degree IF = 50 mA
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
TT Electronics | OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
sensors@ttelectronics.com | www.ttelectronics.com
Issue A 11/2016 Page 2