2N60 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2N60

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

2N60

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage

VGS= 0; ID=250µA

VGS(th) Gate Threshold Voltage

VDS= VGS; ID=250µA

VSD

Diode Forward On-voltage

IS= 2A ;VGS= 0

RDS(on) Drain-Source On-Resistance

VGS= 10V; ID= 1A

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS=600V; VGS= 0

tr

Rise Time

td(on)

Turn-on Delay Time

tf

Fall Time

td(off)

Turn-off Delay Time

VGS=10V;

ID=2.4A;

VDD=300V;

RL=25Ω

MIN TYPE MAX UNIT

600

V

2.0

4.0

V

1.4

V

5.0

Ω

±100 nA

10

µA

25

60

10

30

ns

25

60

20

50

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

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