F2N60(V3) View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
F2N60 Datasheet PDF : 13 Pages
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Diode Forward Current(N
ote 2)
IS
Reverse Recovery Time
trr
Reverse Recovery
Charge
Qrr
Reverse Recovery
Current
IRRM
TJ=25℃,IF=2A,
dIF/dt=100A/μS,VGS=0V
F2N60
-- --
2
A
--
80 --
nS
-- 180 --
nC
--
4.5 --
A
Notes：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=3.58A,VDD=50V,VGATE=600V,Start TJ=25℃.
6. ISD=2A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃.
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 3 of 13
Rev. 1.0
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