ZXMN6A08E6QTA View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
ZXMN6A08E6QTA Datasheet PDF : 8 Pages
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ZXMN6A08E6Q
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gfs
VSD
trr
Qrr
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
60
1
Typ
0.067
0.1
6.6
0.88
19.2
30.3
459
44.2
24.1
3.7
5.8
1.4
1.9
2.6
2.1
12.3
4.6
Notes:
9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
Max
0.5
100
0.08
0.15
1.2
Unit
Test Condition
V
ID = 250µA, VGS = 0V
µA VDS = 60V, VGS = 0V
nA VGS = 20V, VDS = 0V
V
ID = 250µA, VDS = VGS
Ω
VGS = 10V, ID = 4.8A
VGS = 4.5V, ID = 4.2A
S
VDS = 15V, ID = 4.8A
V
IS = 4A, VGS = 0V, TJ = +25°C
ns IF = 1.4A, di/dt = 100A/µs,
nC TJ = +25°C
pF
pF
VDS = 40V, VGS = 0V
f = 1MHz
pF
nC VGS = 4.5V
nC
nC VGS = 10V
nC
VDS = 30V
ID = 1.4A
ns
ns
VDD = 30V, VGS = 10V
ns ID = 1.5A, RG 6Ω
ns
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
4 of 8
www.diodes.com
March 2015
© Diodes Incorporated
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