MHPM7A15A60A View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MHPM7A15A60A Datasheet PDF : 10 Pages
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MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)
Rating
Symbol
BRAKE CIRCUIT
IGBT Reverse Voltage
Gate-Emitter Voltage
Continuous IGBT Collector Current
Peak IGBT Collector Current (PW = 1.0 ms) (2)
IGBT Power Dissipation
VCES
VGES
IC
IC(pk)
PD
Diode Reverse Voltage
Continuous Output Diode Current
Peak Output Diode Current (PW = 1.0 ms) (2)
TOTAL MODULE
VRRM
IF
IF(pk)
Isolation Voltage — (47–63 Hz, 1.0 Minute Duration)
Ambient Operating Temperature Range
Operating Case Temperature Range
Storage Temperature Range
Mounting Torque
VISO
TA
TC
Tstg
—
Value
600
± 20
15
30
55
600
15
30
2500
– 40 to + 85
– 40 to + 90
– 40 to +150
6.0
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
INPUT RECTIFIER BRIDGE
Reverse Leakage Current (VRRM = 600 V)
Forward Voltage (IF = 15 A)
Thermal Resistance (Each Die)
OUTPUT INVERTER
IR
—
10
50
VF
—
1.05
1.5
RθJC
—
—
2.9
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
IGES
—
—
± 20
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
ICES
TJ = 25°C
—
TJ = 125°C
—
—
200
—
2.0
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
VGE(th)
4.0
6.0
8.0
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)
V(BR)CES
600
700
—
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A)
VCE(SAT)
—
2.7
3.5
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
Cies
—
950
—
Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V)
QT
—
75
—
Fall Time — Inductive Load
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
tfi
—
200
350
Turn-On Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
E(on)
—
—
1.0
Turn-Off Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
E(off)
—
—
1.0
Diode Forward Voltage (IF = 15 A, VGE = 0 V)
VF
—
Diode Reverse Recovery Time
(IF = 15 A, V = 400 V, dI/dt = 50 A/µs)
trr
—
Diode Stored Charge (IF = 15 A, V = 400 V, di/dt = 50 A/µs)
Qrr
—
Thermal Resistance — IGBT (Each Die)
RθJC
—
Thermal Resistance — Free-Wheeling Diode (Each Die)
(2) 1.0 ms = 1.0% duty cycle
RθJC
—
1.5
2.0
140
200
—
900
—
1.9
—
3.7
Unit
V
V
A
A
W
V
A
A
VAC
°C
°C
°C
lb–in
Unit
µA
V
°C/W
µA
µA
mA
V
V
V
pF
nC
ns
mJ
mJ
V
ns
nC
°C/W
°C/W
MHPM7A15A60A
2
MOTOROLA
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