NCV8403STT1G View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NCV8403STT1G

Self-Protected Low Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8403, NCV8403A

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

VDSS

42

Vdc

Gate−to−Source Voltage

VGS

"14

Vdc

Drain Current

Continuous

ID

Internally Limited

Total Power Dissipation

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

PD

W

1.13

1.56

Thermal Resistance − SOT−223 Version

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Thermal Resistance − DPAK Version

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

RqJC

RqJA

RqJA

RqJC

RqJA

RqJA

°C/W

12

110

80

2.5

95

50

Single Pulse Inductive Load Switching Energy

(VDD = 25 Vdc, VGS = 5.0 V, IL = 2.8 A, L = 120 mH, RG = 25 W)

EAS

470

mJ

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms)

VLD

55

V

Operating Junction Temperature

TJ

−40 to 150

°C

Storage Temperature

Tstg

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.

2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.

+

ID

IG

+

VGS

GATE

DRAIN

SOURCE

VDS

−

−

Figure 1. Voltage and Current Convention

http://onsemi.com

2

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