SD8250 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

SD8250

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

STMicroelectronics 

SD8250

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC

Symb o l

Test Conditions

BVCBO

BVEBO

BVCES

ICES

hFE

IC = 35mA

IE = 15mA

IC = 25mA

VBE = 0V

VCE = 5V

IE = 0mA

IC = 0mA

IB = 0mA

VCE = 50V

IC = 1A

DYNAMIC

Symbol

Test Conditions

POUT

ηc

f = 960 — 1215 MHz

f = 960 — 1215 MHz

PG f = 960 — 1215 MHz

N ot e:

Pulse Width = 20µSec

Duty Cycle = 5%

TC

= 25°C

PIN = 40 W

PIN = 40 W

PIN = 40 W

VCC = 50 V

VCC = 50 V

VCC = 50 V

Valu e

Unit

Min. Typ. Max.

65 — — V

4.0 — — V

60 — — V

— — 20 mA

10 — — —

V al u e

Uni t

Min. Typ. Max.

250 295 — W

38 44 — %

8.0 8.7 — dB

TYPICAL PERFORMANCE

TYPICAL BROADBAND

TYPICAPLOWBERROAAMDPLBIFAIENRD POWER

AMPLIFIER

I

N

P

U 5.1

INPUT VSWR vs FREQUENCY

T

400

P

350

O

W

POUT

PIN = 40W

100

90

C

O

I

V

N

S

P

WU

RT 3..1

E

R

300

PIN = 32W

O

U

250

T

P

U 200

PIN = 25W

L

80

L

E

C

70

T

O

R

60

V

S

W

R

.

1.1

960

1090

1215

T

W 150

PIN = 40W

ηC

E

F

50

F

FREQUENCY (MHz)

A

.

T

T

100

S

PIN = 32W

PIN = 25W

40

%

50

960

1090

FREQUENCY (MHz)

30

1215

2/5

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