E13009 View Datasheet(PDF) - Shantou Huashan Electronic Devices
Part Name
Description
Manufacturer
E13009 Datasheet PDF : 1 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HE13009
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）…………………… 100W
VCBO——Collector-Base Voltage…………………………… 700V
VCEO——Collector-Emitter Voltage………………………… 400V
VEBO——Emitter-Base Voltage……………………………… 9V
IC——Collector Current（DC）……………………………… 12A
IB——Base Current……………………………………………6A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
BVCEO
IEBO
HFE（1）
HFE（2）
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
Cob
fT
tON
tSTG
tF
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
Min Typ Max Unit
Test Conditions
400
V IC=10mA, IB=0
1 mA VEB=9V, IC=0
8
40
VCE=5V, IC=5A
6
30
VCE=5V, IC=8A
1
V IC=5A, IB=1A
1.5 V IC=8A, IB=1.6A
3 V IC=12A, IB=3A
1.2 V IC=5A, IB=1A
1.6 V IC=8A, IB=1.6A
180
pF VCB=10V,f=0.1MHz
4
MHz VCE=10V,IC=0.5A
1.1 μs
3 μs VCC=125V, IC=8A,
0.7 μs IB1=1.6A,IB2=-1.6A
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