FAD6263 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

FAD6263

Half-Bridge Gate Driver, 600 V, 3 A

ON Semiconductor 

FAD6263

Table 2. MAXIMUM RATINGS

Rating

Symbol

Value

Unit

High−Side Floating Supply Voltage

High−Side Floating Offset Voltage

High−Side Floating Output Voltage

Low−Side and Logic−Fixed Supply Voltage

Logic Input Voltage (IN, SD, SR)

Programmable Dead−Time Pin Voltage

Low−Side Output Voltage

Power Ground

Allowable Offset Voltage Slew Rate

Power Dissipation (Note 2)

Thermal Resistance, Junction−to−Ambient

(Do not exceed PD under any circumstances Note 3)

VB

VS

VHO

VDD

VIN

DT

VLO

COM

dVS/dt

PD

θJA

−0.3 to 625

(VB – 25) to (VB + 0.3)

(VS – 0.3) to (VB + 0.3)

−0.3 to 25

−0.3 to (VDD + 0.3)

−0.3 to (VDD + 0.3)

(COM – 0.3) to (VDD + 0.3)

(VDD – 25) to (VDD + 0.3)

50

0.86

145

V

V

V

V

V

V

V

V

V/ns

W

°C/W

Maximum Junction Temperature

Storage Temperature Range

TJ(max)

TSTG

150

°C

−55 to 150

°C

ESD Capability, Human Body Model (Note 4)

ESDHBM

2

kV

ESD Capability, Charged Device Model (Note 4)

ESDCDM

2

kV

Moisture Sensitivity Level

MSL

1

−

Lead Temperature Soldering Reflow (SMD Styles Only),

Pb−Free Versions (Note 5)

TSLD

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

2. Do not exceed PD under any circumstances.

3. Refer to the following standards:

JESD51−2: Integral circuits thermal test method environmental conditions − natural convection

JESD51−3: Low effective thermal conductivity test board for leaded surface mount packages

4. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per ANSI/ESDA/JEDEC JS−001−2012

ESD Charged Device Model tested per JESD22−C101

5. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Table 3. RECOMMENDED OPERATING RANGES

Rating

Symbol

Min

Max

Unit

High−Side Vs Floating Supply Offset Voltage (Note 6)

VS

5 – VBS

600

V

High−side VBS Bootstrap Voltage

VBS

VBSUV+

22

V

High−Side Output Voltage

VHO

VS

VB

V

Low−Side and Logic Supply Voltage

VDD

VDDUV+

22

V

Low−Side Output Voltage

VLO

COM

VDD

V

Logic Input Voltage (IN, SD, SR)

VIN

VSS

VDD

V

Programmable Dead−Time Pin Voltage

DT

VSS

VDD

V

Power Ground

COM

VDD − 22

VDD

V

Ambient Temperature (Note 7)

TA

−40

125

°C

External Shutdown Input Pull−Up Resistance (Note 8)

RSDext

3.1

12.4

kW

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

6. Recommended based on min 5 V on VB, for proper operation of the level shifter circuit and ensure proper propagation of the signal from

the input to the output.

7. Power and thermal impedance should be determined with case so TJ does not exceed 150°C.

8. Pulled up to 5 V.

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