P0550EI View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
P0550EI Datasheet PDF : 8 Pages
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P0550EI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
500
V
2
3
4
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±30V
±100 nA
Gate Voltage Drain Current
IDSS
VDS = 500V, VGS = 0V , TC = 25 °C
VDS = 400V, VGS = 0V , TC = 100 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2.5A
1.26 1.55 Ω
Forward Transconductance1
gfs
VDS = 10V, ID = 2.5A
6.5
S
DYNAMIC
Input Capacitance
Ciss
565
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
68
pF
Reverse Transfer Capacitance
Crss
10
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDD = 400V, VGS = 10V,
ID = 5A
18
3
nC
7
Turn-On Delay Time2
td(on)
30
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 250V,
ID = 5A,RG = 6Ω
25
nS
98
Fall Time2
tf
30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
5
A
Forward Voltage1
VSD
IF = 5A, VGS = 0V
1
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / mS
277
nS
1.8
uC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REV 1.0
2
2015/7/14
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