SI3407DV View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI3407DV Datasheet PDF : 11 Pages
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P-Channel 20-V (D-S) MOSFET
Si3407DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0240 at VGS = - 4.5 V
- 20
0.0372 at VGS = - 2.5 V
TSOP-6
Top View
ID (A)
- 8a
- 8a
Qg (Typ.)
21 nC
3 mm
1
6
2
5
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Available
APPLICATIONS
• Load Switch
(4) S
- Notebook PC
3
4
2.85 mm
Ordering Information:
Si3407DV-T1-E3 (Lead (Pb)-free)
Si3407DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
07 XXX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
- 20
± 12
- 8a
- 8a
- 7.5b, c
- 6b, c
- 25
- 3.5
- 1.7b, c
-8
3.2
4.2
2.7
2b, c
1.3b, c
- 55 to 150
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
45
25
Maximum
62.5
30
Unit
°C/W
Document Number: 69987
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
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