AP3N2R8MT View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
Manufacturer
AP3N2R8MT Datasheet PDF : 6 Pages
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Advanced Power
Electronics Corp.
AP3N2R8MT
Halogen-Free Product
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ 100% Rg & UIS Test
▼ Simple Drive Requirement
▼ Ultra Low On-resistance
▼ RoHS Compliant & Halogen-Free
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Description
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AP3N2R8 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID4
30V
2.8mΩ
105A
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PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
. Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20 / -12
V
ID@TC=25℃
Drain Current (Chip), VGS @ 10V4
105
A
ID@TC=25℃
Drain Current, VGS @ 10V4(Package Limited)
60
A
ID@TA=25℃
Drain Current, VGS @ 10V3
33.7
A
ID@TA=70℃
Drain Current, VGS @ 10V3
27
A
IDM
Pulsed Drain Current1
200
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
52
W
5
W
125
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
2.4
25
Unit
℃/W
℃/W
1
201602262
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