AP3N3R3MT View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
Manufacturer
AP3N3R3MT Datasheet PDF : 6 Pages
| |||
Advanced Power
Electronics Corp.
AP3N3R3MT
Halogen-Free Product
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Ultra Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP3N3R3 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
30V
3.3mΩ
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
. Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V4(Silicon Limited)
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
30
V
+20
V
95
A
60
A
30
A
24
A
240
A
50
W
5
W
45
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
2.5
25
Unit
℃/W
℃/W
1
201708301
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