ACE3401DBMH View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
Manufacturer
ACE3401DBMH Datasheet PDF : 6 Pages
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ACE3401D
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Off characteristics
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
IDSS
IGSSF
IGSSR
VDS=-30V, VGS=0V
VGS=-20V
VGS=20V
-1 uA
-100 nA
100 nA
On characteristics
VGS=-10V, ID=-4.2A
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
Gate Threshold Voltage
VGS(th) VDS=VGS, ID=-250uA -0.7 -1.0
Switching characteristics(3)
63
75 mΩ
120
-1.3 V
Turn-On Delay Time
Td(on)
6.5
Turn-On Rise Time
tf
VDD=-15V,RL=3.6Ω
3.5
ns
Turn-Off Delay Time
td(off)
VGS=-10V, RGEN=6Ω
40
Turn-Off Fall Time
tf
13
Dynamic characteristics(3)
Input Capacitance
Ciss
600
Output Capacitance
Coss
VDS=-30V, VGS=0V
f=200KHz
85
pF
Reverse Transfer Capacitance
Crss
566
Drain-source diode characteristics and maximum ratings
Body Diode Forward Voltage
VSD
VSD=0V, IS=-1A
-0.78 -1
V
Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board
design.
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
VER 1.2 2
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