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Part Name
Description
2SD313-F-TA3-T View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SD313-F-TA3-T
NPN EPITAXIAL PLANAR TRANSISTOR
Unisonic Technologies
2SD313-F-TA3-T Datasheet PDF : 4 Pages
1
2
3
4
2SD313
TYPICAL CHARACTERISTICS
1000
DC Current Gain
100
NPN SILICON TRANSISTOR
Saturation Voltage vs. Collector Current
10000
I
C
=10I
B
1000
10
100
1
10
100
1000
10000
Collector Current(mA)
10000
V
BE(SAT)
vs. I
C
I
C
=10I
B
10
10
100
1000
Collector Current(mA)
10000
SOA
10
1000
1
100
10
100
1000
Collector Current(mA)
10000
10000
V
BE(ON)
vs. I
C
V
CE
=2V
0.1
1
10
100
Collector to Emitter Voltage (V)
1000
100
10
100
1000
Collector Current(mA)
10000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R203-001,B
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