BDT82 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BDT82

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

DESCRIPTION

·DC Current Gain -hFE = 40(Min)@ IC= -5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84;

-100V(Min)- BDT86; -120V(Min)- BDT88

·Complement to Type BDT81/83/85/87

APPLICATIONS

·Designed for use in audio output stages and general amplifer

and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT82

-60

BDT84

-80

VCBO

Collector-Base Voltage

V

BDT86

-100

BDT88

-120

BDT82

-60

BDT84

-80

VCEO

Collector-Emitter Voltage

V

BDT86

-100

BDT88

-120

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-15

A

ICM

Collector Current-Peak

-20

A

IBB

Base Current

PC

Collector Power Dissipation

TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-4

A

125

W

150

℃

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

MAX

1

70

UNIT

℃/W

℃/W

isc Product Specification

BDT82/84/86/88

isc Website：www.iscsemi.cn

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