BDT86F View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

BDT86F

Silicon PNP Power Transistors

New Jersey Semiconductor 

J^e.mi-Conducko'i Lpioducti, (inc..

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

fELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon PNP Power Transistors

BDT82F/84F/86F/88F

DESCRIPTION

• DC Current Gain -hFE= 40(Min)@ IC=-5A

• Collector-Emitter Sustaining Voltage-:

: VcEO(sus) = -ouv(Min)- bu I b^h; -auv(Min)- BU 1 84h;

-100V(Min)- BDT86F; -120V(Min)- BDT88F

• Complement to Type BDT81F/83F/85F/87F

APPLICATIONS

• Designed for use in audio output stages and general amplifer

and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

SYMBOL

PARAMETER

VALUE

UNIT

BDT82F

-60

VCBO

BDT84F

-80

V

BDT86F -100

BDT88F -120

BDT82F

-60

BDT84F

-80

VCEO Collector-Emitter Voltage

V

BDT86F -100

BDT88F -120

VEBO Emitter-Base Voltage

-7

V

Ic

Collector Current-Continuous

-15

A

I CM

Collector Current-Peak

-20

A

IB

Base Current

Collector Power Dissipation

PC

C ^3 \^

Tj

Junction Temperature

-4

A

36

W

150

'C

Tstg

Storage Temperature Range

-65-150 'C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth i-c Thermal Resistance.Junction to Case

MAX UNIT

6 'C/W

2

X1.BASE

I • 2.COLLECTOR

3.BV1ITTER

TO-220Fa package

-«— B —»

•—

rf

!

;/:

•••/. J

A .. '

J, k

K

*-

H»4 D

p*.

mm

DIM WIN

A 1635

B 9.90

C 4.35

L) 0.75

F 3.20

Q £.90

H 5.15

j 0.45

K 13.35

L 1,10

H 4.98

Q 4.85

R 2.95

MAX

17.15

10.10

4.65

0.80

3.40

7.10

5.45

075

13.65

130

5.18

5.15

3.25

S 2.70 2.90

wU

1.75

1.30

2.05

1.SO

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