IXBK64N250 View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

Manufacturer

IXBK64N250

High Voltage, High Gain BiMOSFET Monolithic Bipolar MOS Transistor

IXYS CORPORATION 

IXBK64N250

IXBX64N250

Fig. 1. Output Characteristics @ TJ = 25ºC

300

VGE = 25V

20V

15V

250

200

10V

150

100

50

5V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

VCE - Volts

Fig. 3. Dependence of VCE(sat) on

Junction Temperature

2.0

VGE = 15V

1.8

1.6

I C = 256A

1.4

1.2

I C = 128A

1.0

0.8

I C = 64A

0.6

-50

-25

0

25

50

75

100

125

150

TJ - Degrees Centigrade

Fig. 5. Breakdown & Threshold Voltages

vs. Junction Temperature

1.15

1.10

1.05

BVCES

1.00

0.95

0.90

0.85

VGE(th)

0.80

-55

-35

-15

5

25

45

65

TJ - Degrees Centigrade

85

105 125

Fig. 2. Output Characteristics @ TJ = 125ºC

270

VGE = 25V

240

20V

15V

210

180

150

10V

120

90

60

30

5V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

VCE - Volts

Fig. 4. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

6.5

6.0

5.5

5.0

I C = 256A

128A

4.5

64A

TJ = 25ºC

4.0

3.5

3.0

2.5

2.0

5

7

9

11

13

15

17

19

21

23

25

VGE - Volts

Fig. 6. Input Admittance

120

100

80

TJ = 125ºC

25ºC

- 40ºC

60

40

20

0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

VGE - Volts

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