BSH103 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BSH103 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH103
FEATURES
• Very low threshold
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL etc.
PINNING - SOT23
PIN
SYMBOL
1
g
2
s
3
d
DESCRIPTION
gate
source
drain
APPLICATIONS
• Power management
• DC to DC converters
• Battery powered applications
• ‘Glue-logic’; interface between logic blocks and/or
periphery
• General purpose switch.
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
handbook, halfpage
3
d
g
1
Top view
s
2
MAM273
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VSD
VGS
VGSth
ID
RDSon
Ptot
PARAMETERS
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
VGD = 0; IS = 0.5 A
VDS = VGS; ID = 1 mA
Ts = 80 °C
VGS = 2.5 V; ID = 0.5 A
Ts = 80 °C
MIN.
−
−
−
0.4
−
−
−
MAX.
30
1
±8
−
0.85
0.5
0.5
UNIT
V
V
V
V
A
Ω
W
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Feb 11
2
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