California Eastern Laboratories.

NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

California Eastern Laboratories.

NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS

Renesas Electronics

LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

NEC => Renesas Technology

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories.

1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories.

NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

California Eastern Laboratories.

NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS

California Eastern Laboratories.

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories.

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories.

1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION

California Eastern Laboratories.

1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories.

NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

NXP Semiconductors.

Quad 1-of-2 video multiplexer/demultiplexer

California Eastern Laboratories.

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE